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Research Paper | Physics Science | Iraq | Volume 4 Issue 9, September 2015 | Rating: 6.2 / 10
Barrier Height and Changing Insulator Thickness of Thin Film MIS Junctions
Dr. Jassim Mohammed Salih Al-fahdawi
Abstract: Using thermal evaporation, metal-semiconductor and metal-insulator-semiconductor thin-films were prepared. By using experimental I-V and activation energy measurements, it was determined that barrier height () increases as the thickness of the insulator increases.
Keywords: THIN FILM MIS JUNCTIONS
Edition: Volume 4 Issue 9, September 2015,
Pages: 1986 - 1989