International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
Call for Papers | Fully Refereed | Open Access | Double Blind Peer Reviewed

ISSN: 2319-7064


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Informative Article | Science and Technology | India | Volume 11 Issue 4, April 2022 | Popularity: 4.9 / 10


     

Field Effect Transistors using Two - Dimensional Pnictogen

Saandeep Sreerambatla


Abstract: 2D Pnictogen is emerging and a competitive candidate for next - generation logic devices due to its interesting physical and chemical properties, such as tunable midrange bandgap and controllable stability. There has been abundant research advancement on the fundamental properties, preparation methods, and related electronic applications of 2D pnictogen. This paper includes a brief understanding of crystal structure, electronic properties and applications of 2D pnictogen Field Effect Transistors (FET). And, the applications of 2D pnictogen in designing electronic devices including transistors, photodetectors, gas sensors, and chemical/ electrochemical sensors.


Keywords: 2D pnictogen, electronic properties, Field Effect Transistors, chemical sensors, electronic devices


Edition: Volume 11 Issue 4, April 2022


Pages: 1389 - 1393


DOI: https://www.doi.org/10.21275/SR24509120330



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Saandeep Sreerambatla, "Field Effect Transistors using Two - Dimensional Pnictogen", International Journal of Science and Research (IJSR), Volume 11 Issue 4, April 2022, pp. 1389-1393, https://www.ijsr.net/getabstract.php?paperid=SR24509120330, DOI: https://www.doi.org/10.21275/SR24509120330