Dimensionless Current-Voltage Characteristics of Amorphous Semiconductor under Non-Constant Mobility Regime by Exact Method

Jyoti Dalal, Y. K. Sharma, N. K. Pandey

Abstract: Inbox Write No Subject Roshni Pandey Wed, 16 Dec 2020 21: 50: 27 The three dimensionless variables are used to obtain the exact analytical expressions for the complete current-voltage characteristics for the single injection current flow in an amorphous semiconductors under non-constant mobility regime. The energy band model for linearly distributed states is considered for the dimensionless characteristics. It is shown that the complete current-voltage characteristics is obtained in a large change in current for a small change in applied voltage. The effect of space-charge-limited currents is understood in the complete span of current-voltage characteristics.

Keywords: Trapping States Carrier Mobility Energy Band Diagram Amorphous Semiconductor Disordered Solids

How to Cite?: Jyoti Dalal, Y. K. Sharma, N. K. Pandey, "Dimensionless Current-Voltage Characteristics of Amorphous Semiconductor under Non-Constant Mobility Regime by Exact Method", Volume 9 Issue 12, December 2020, International Journal of Science and Research (IJSR), Pages: 913-916, https://www.ijsr.net/getabstract.php?paperid=SR201214214026, DOI: https://dx.doi.org/10.21275/SR201214214026