International Journal of Science and Research (IJSR) Call for Papers | Fully Refereed | Open Access | Double Blind Peer Reviewed
ISSN: 2319-7064
Downloads: 51 | Views: 295
Research Paper | Physics | India | Volume 9 Issue 12, December 2020 | Popularity: 6.1 / 10
Dimensionless Current-Voltage Characteristics of Amorphous Semiconductor under Non-Constant Mobility Regime by Exact Method
Jyoti Dalal,
Y. K. Sharma,
N. K. Pandey
Abstract: Inbox Write No Subject Roshni Pandey Wed, 16 Dec 2020 21: 50: 27 The three dimensionless variables are used to obtain the exact analytical expressions for the complete current-voltage characteristics for the single injection current flow in an amorphous semiconductors under non-constant mobility regime. The energy band model for linearly distributed states is considered for the dimensionless characteristics. It is shown that the complete current-voltage characteristics is obtained in a large change in current for a small change in applied voltage. The effect of space-charge-limited currents is understood in the complete span of current-voltage characteristics.
Keywords: Trapping States Carrier Mobility Energy Band Diagram Amorphous Semiconductor Disordered Solids
Edition: Volume 9 Issue 12, December 2020
Pages: 913 - 916
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