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Comparative Studies | Applied Physics | India | Volume 13 Issue 2, February 2024 | Rating: 5 / 10

A Comparative Study of Silicon and Silicon Carbide Semiconductors

Manas Sheth ^[4]

Abstract: This research paper provides an in - depth comparison of intrinsic and extrinsic semiconductors, focusing on their electrical properties, mechanisms of operation, and implications for technological applications. Through a detailed examination of band theory, charge carrier dynamics, and the impact of doping, this study elucidates the fundamental differences between these two types of semiconductors. Utilizing silicon as the primary material, the paper explores how these differences influence the efficiency and functionality of semiconductor devices, addressing potential uncertainties in experimental methodologies and highlighting recent breakthroughs in the field.

Keywords: Semiconductors, Silicon, Silicon Carbide, Doping, Intrinsic semiconductors, Extrinsic semiconductors, Electrical conductivity, Charge carriers, Mobility, Band Theory, Bandgap engineering.

Edition: Volume 13 Issue 2, February 2024,

Pages: 785 - 789