Spectroscopic Study of BFO Thin Film Deposited on Si (111, 100)
International Journal of Science and Research (IJSR)

International Journal of Science and Research (IJSR)
Call for Papers | Fully Refereed | Open Access | Double Blind Peer Reviewed

ISSN: 2319-7064


Downloads: 101 | Views: 342

Research Paper | Physics Science | India | Volume 3 Issue 12, December 2014 | Popularity: 6.2 / 10


     

Spectroscopic Study of BFO Thin Film Deposited on Si (111, 100)

Sadhan Chandra Das, Abhijit Majumdar, Sumant Katiyal, Satish Maan, Thoudinja Shripathi


Abstract: We report the thin film deposition of Bix (FeO3) y (x and y is arbitary number) on Si (111) and Si (100) substrate by Pulse laser deposition technique. X-ray diffraction pattern shows that film deposited on Si (100) substrate do not have any single phase of BFO (BiFeO3) rather it has tendency of amorphous structure. Crystallinity evolved after annealing the films at 600C as the film is deposited on Si (111) substrate. X-ray photoelectron spectroscopy (XPS) study reveals the electronic bonds structure and stoichiometry of Bi and FeO3.


Keywords: BiFeO3, XPS, Raman, XRD


Edition: Volume 3 Issue 12, December 2014


Pages: 1311 - 1314



Make Sure to Disable the Pop-Up Blocker of Web Browser


Text copied to Clipboard!
Sadhan Chandra Das, Abhijit Majumdar, Sumant Katiyal, Satish Maan, Thoudinja Shripathi, "Spectroscopic Study of BFO Thin Film Deposited on Si (111, 100)", International Journal of Science and Research (IJSR), Volume 3 Issue 12, December 2014, pp. 1311-1314, https://www.ijsr.net/getabstract.php?paperid=SUB14587, DOI: https://www.doi.org/10.21275/SUB14587

Top